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Titlebook: Carbon Nanotubes for Interconnects; Process, Design and Aida Todri-Sanial,Jean Dijon,Antonio Maffucci Book 2017 Springer International Pub

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发表于 2025-3-21 17:32:10 | 显示全部楼层 |阅读模式
书目名称Carbon Nanotubes for Interconnects
副标题Process, Design and
编辑Aida Todri-Sanial,Jean Dijon,Antonio Maffucci
视频videohttp://file.papertrans.cn/222/221619/221619.mp4
概述Provides a single-source reference on carbon nanotubes for interconnect applications.Includes complete coverage of current Cu-based interconnect problems for both 2D and 3D interconnects.Covers topics
图书封面Titlebook: Carbon Nanotubes for Interconnects; Process, Design and  Aida Todri-Sanial,Jean Dijon,Antonio Maffucci Book 2017 Springer International Pub
描述This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.
出版日期Book 2017
关键词3D Integrated Circuits; Carbon Nanotubes; Carbon Nanotubes and Nanostructures; Graphene; Graphene Nanori
版次1
doihttps://doi.org/10.1007/978-3-319-29746-0
isbn_softcover978-3-319-80642-6
isbn_ebook978-3-319-29746-0
copyrightSpringer International Publishing Switzerland 2017
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发表于 2025-3-21 23:21:25 | 显示全部楼层
https://doi.org/10.1007/978-3-642-23409-5Analysis for very large-scale integrated (VLSI) systems (modeled using an entire IBM Power 7 processor) reveals CNT field effect transistors (CNFETs) would provide an order of magnitude benefit in the energy-delay product (EDP, a measure of energy efficiency) over silicon CMOS [6–9].
发表于 2025-3-22 01:05:13 | 显示全部楼层
nect problems for both 2D and 3D interconnects.Covers topicsThis book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material
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Electrical Conductivity of Carbon Nanotubes: Modeling and Characterizationtransitions are taken into account. The conductivity model is consistent with the classical Drude model and is able to describe novel phenomena associated with the signal propagation along CNTs, such as plasmon resonances of slow surface waves or intershell tunneling effect.
发表于 2025-3-23 01:16:49 | 显示全部楼层
Carbon Nanotubes for Monolithic 3D ICsAnalysis for very large-scale integrated (VLSI) systems (modeled using an entire IBM Power 7 processor) reveals CNT field effect transistors (CNFETs) would provide an order of magnitude benefit in the energy-delay product (EDP, a measure of energy efficiency) over silicon CMOS [6–9].
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