Titlebook: CMOS 60-GHz and E-band Power Amplifiers and Transmitters; Dixian Zhao,Patrick Reynaert Book 2015 Springer International Publishing Switzer

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Book 2015t and layout levels. The authors show the recent development of millimeter-wave design techniques, especially of power amplifiers and transmitters, and presents novel design concepts, such as “power transistor layout” and “4-way parallel-series power combiner”, that can enhance the output power and

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Introduction,ata rates and mobility required by daily booming wireless applications. Currently, the fourth generation (4G) wireless network can support data rates up to 1 Gb/s for low mobility, such as local wireless access, and up to 100 Mb/s for high mobility, such as mobile access. However, due to the limited

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mm-Wave Active and Passive Devices, of offering high-speed transistors, the advanced CMOS technology usually provides several RF and mm-Wave friendly options, such as thick top metals and the silicon substrate with resistivity of 10 . cm. All these features enable the integration of the complete mm-Wave system on a single CMOS die.

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Low-Power and Efficiency Enhancement Techniques for mm-Wave PAs,he most power-hungry one, the PA has to maintain sufficient linearity to ensure the signal integrity and achieve high efficiency for low power. The conventional TX based on I/Q modulation has variable envelope in both I and Q paths. It needs to operate at 3–10 dB back-off from the peak output power

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