Titlebook: Boron Synthesis, Structure, and Properties; Proceedings of the C J. A. Kohn,W. F. Nye,G. K. Gaulé Conference proceedings 1960 Springer Scie

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Growth of Boron Crystals by the Czochralski and Floating-Zone Methods, impurities had segregation coefficients less than unity. The concentration of magnesium decreased toward the lower end of the bar. Electrical measurements made on the zoned bars showed that the resistivity ranged from 10. to 10. ohm-cm, decreasing toward the bottom portion of the bar. Small monocry

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Bernd Hillebrand,Grigory Pishchulovhe three modifications established by single crystal data there are several other claimants to recognition. The multiplication of structural variants at lower temperatures probably is dictated by kinetic rather than thermodynamic factors. It is suggested that boron prepared by deposition onto heated

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Izabela Kudelska,Monika Kosacka-Olejnik crystal bars of boron of small diameter could be deposited on a straight tantalum filament in such a manner that the tantalum filament could be subsequently pulled from the deposit upon cooling, leaving the small crystal bar intact. The deposited boron bar was introduced directly into the floating-

dissolution