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Titlebook: Basic Semiconductor Physics; Chihiro Hamaguchi Textbook 20173rd edition Springer International Publishing AG 2017 Semiconductor Physics te

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发表于 2025-3-21 17:05:27 | 显示全部楼层 |阅读模式
期刊全称Basic Semiconductor Physics
影响因子2023Chihiro Hamaguchi
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发行地址Comprehensive, successfully tested textbook now in 3rd edition.Discusses semiconductor lasers in detail.Only textbook with perturbation theory to explain the exact picture of the electron-electron int
学科分类Graduate Texts in Physics
图书封面Titlebook: Basic Semiconductor Physics;  Chihiro Hamaguchi Textbook 20173rd edition Springer International Publishing AG 2017 Semiconductor Physics te
影响因子.The new edition of this textbook presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed.. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed.. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double het
Pindex Textbook 20173rd edition
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发表于 2025-3-21 21:54:28 | 显示全部楼层
Wannier Function and Effective Mass Approximation,on is derived with the help of Wannier function. Using Schrödinger equation based on the effective–mass approximation, we discuss the shallow impurity levels of donors in Ge and Si. Transport properties of electrons and holes are interpreted in terms of the effective mass in the classical mechanics
发表于 2025-3-22 02:46:32 | 显示全部楼层
Optical Properties 1,Maxwell’s equations. Then quantum mechanical derivations of direct and indirect optical transition rates are given in addition to the classification of the joint density of states. Optical transitions associated with electron-hole pair, excitons, are also discussed. Dielectric functions are discusse
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Magnetotransport Phenomena,al with Hall effect, magnetoresistance, and oscillatory magnetoresistance effects in detail. Hall effect is very useful to determine the mobility and density of carriers. Shubnikov–de Haas oscillations are observed in degenerate semiconductors and provide the information of Fermi energy. Magnetophon
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Light Emission and Laser,connect absorption with spontaneous emission and stimulated emission. Then the spontaneous and stimulated emission rates are derived from the perturbation theory. Absorption and emission rates are strongly affected by the density of states, The density of states in the presence of impurities are sho
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,Electron–Phonon Interaction and Electron Transport,spective carrier mobility is obtained. In order to get an better insight into the electron transport, scattering rates and mobilities due to the various processes are evaluated numerically and plotted as functions of electron energy, temperature and carrier densities. In addition, electron mobility
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