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Titlebook: Applications of Graphene; An Overview E. L. Wolf Book 2014 The Editor(s) (if applicable) and The Author(s), under exclusive license to Spri

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期刊全称Applications of Graphene
期刊简称An Overview
影响因子2023E. L. Wolf
视频video
发行地址Illustrates the basic properties and potential applications of graphene.Includes supplementary material:
学科分类SpringerBriefs in Materials
图书封面Titlebook: Applications of Graphene; An Overview E. L. Wolf Book 2014 The Editor(s) (if applicable) and The Author(s), under exclusive license to Spri
影响因子Graphene is presented and analyzed as a replacement for silicon. The Primary focus is on solar cell and CMOS device technologies, with attention to the fabrication methods, including extensions needed, in each case. Specialized applications for graphene within the existing silicon technology are discussed and found to be promising.
Pindex Book 2014
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Solar Cells and Electrodes,ctrodes, one of which has to let light into the absorbing region of the device. The photovoltaic action of a solar cell occurs as photo-generated carriers, electrons and holes, are generated in (or flow into) a central region of strong electric field, that sends carriers of opposite charge in opposi
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Solar Cells and Electrodes,te directions. In the conventional silicon solar cell, the absorbing regions extend beyond the depletion region, containing the electric field, into the oppositely doped electrode regions, by diffusion lengths L on either side.
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https://doi.org/10.1007/978-1-4614-6170-8tin oxide, ITO, that is deposited on glass to make the leading form of transparent conductor, as $800 /kg.) Typically, however, the exfoliation processes leave nano-platelets of only 100–500 nm lateral extent, single monolayer to tens of monolayers in thickness, with defects primarily, but not entirely, at the edges.
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Actor-Based Models for Longitudinal Networkste directions. In the conventional silicon solar cell, the absorbing regions extend beyond the depletion region, containing the electric field, into the oppositely doped electrode regions, by diffusion lengths L on either side.
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