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Titlebook: Analysis of Piezoelectric Semiconductor Structures; Jiashi Yang Book 2020 Springer Nature Switzerland AG 2020 Piezoelectricity.semiconduct

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发表于 2025-3-21 17:23:59 | 显示全部楼层 |阅读模式
期刊全称Analysis of Piezoelectric Semiconductor Structures
影响因子2023Jiashi Yang
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发行地址Examines for the first time the mechanics of piezoelectric semiconductors.Features a systematic and concise treatment of the three-dimensional general theory, the one-dimensional theories for extensio
图书封面Titlebook: Analysis of Piezoelectric Semiconductor Structures;  Jiashi Yang Book 2020 Springer Nature Switzerland AG 2020 Piezoelectricity.semiconduct
影响因子.This book presents the mechanics of piezoelectric semiconductor structures where the main electromechanical coupling of interest is the interaction between mechanical fields and semiconduction. This volume stands as the first full book treatment of this multi-physical subject from the mechanics angle. The analysis of piezoelectric semiconductor structures and devices is an emerging and rapidly growing interdisciplinary area involving materials, electronics, and solid mechanics. It has direct applications in the new area of piezotronics and piezo-phototronics. The book is theoretical, beginning with a phenomenological framework and progressing to include solutions to problems fundamental to the theory and application. Dr. Yang illustrates how in piezoelectric semiconductors, mechanical fields interact with semiconduction through the piezoelectrically produced electric fields by mechanical loads. This provides the foundation of piezotronic and piezo-phototronic devices in which semiconduction is induced, affected, manipulated, or controlled by mechanical fields. Also discussing composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors as well as thermal e
Pindex Book 2020
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发表于 2025-3-21 21:23:50 | 显示全部楼层
Exact Solutions,le only in a few relatively special cases. Most of them are based on the linearized theory. Section 2.1 is simple but nontrivial. Section 2.2 is a one-dimensional problem mathematically in the sense that there is only one spatial variable. Sections 2.3, 2.4, and 2.5 are antiplane problems. Section 2
发表于 2025-3-22 00:23:44 | 显示全部楼层
Bending of Beams,ness of a beam is smaller than its extensional stiffness. Therefore bending is suitable in low-frequency applications. Theoretical modeling of bending is more complicated than that of extension. This chapter begins with the establishment of a one-dimensional model for the bending of piezoelectric se
发表于 2025-3-22 04:35:12 | 显示全部楼层
Extension and Bending of Plates,pter, we derive two-dimensional equations for thin plates of piezoelectric semiconductors [1, 2]. We follow R.D. Mindlin’s approach [3–5], beginning from the three-dimensional equations with power series expansions in the plate thickness coordinate and then truncating the expansions to obtain low-or
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https://doi.org/10.1007/3-540-51916-5formation first, and then reduce them to bending without shear deformation. For a complete treatment, while deriving the one-dimensional equations for bending, we also include extension because bending and extension may be coupled due to anisotropy or nonlinearity. A few static and dynamic problems are analyzed using the equations derived.
发表于 2025-3-22 20:43:47 | 显示全部楼层
Bending of Beams,formation first, and then reduce them to bending without shear deformation. For a complete treatment, while deriving the one-dimensional equations for bending, we also include extension because bending and extension may be coupled due to anisotropy or nonlinearity. A few static and dynamic problems are analyzed using the equations derived.
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发表于 2025-3-23 05:50:11 | 显示全部楼层
I. The RHS model for decaying states,-dimensional problem mathematically in the sense that there is only one spatial variable. Sections 2.3, 2.4, and 2.5 are antiplane problems. Section 2.3 is axisymmetric and one-dimensional. The other two are two-dimensional.
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