Titlebook: Analog Circuit Design; MOST RF Circuits, Si Willy Sansen,Rudy J. Plassche,Johan H. Huijsing Book 1996 Kluwer Academic Publishers 1996 CAD.C

寒冷

约会

RF modelling of MOSFETs. On-wafer S-parameter measurements have been performed on MOS devices as a function of the frequency up to the GHz-range. From these S-parameters important RF quantities such as input impedance, transconductance, current and voltage gain etc., have been obtained. A comparison between experimental r

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2 GHz RF Circuits in BiCMOS Processolar technologies are discussed for the development of low noise amplifiers. A comparison between the architectures proposed for the implementation of silicon RF functions and those commonly used is also presented. The main advantages of the proposed new architectures are the significant improvement

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separate

A Monolithic 900 MHz Spread-Spectrum Wireless Transceiver in 1-μm CMOSC technology has made an impact on the baseband sections. The needs for low power operation and greater miniaturization impel RF and IF circuit technology towards greater levels of integration [1]. The single-chip radio has yet to be realized in the 1 to 2 GHz frequency band, where most of the digit

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Infect

Carminative

开花期女

Bandpass Delta-Sigma Converters in IF ReceiversC offset and flicker noise as well as eliminating the gain mismatch in the I and Q signal paths are presented..By minimizing the quantization noise at an intermediate frequency, bandpass Delta-Sigma converters offer the most efficient method of analog-to-digital conversion of the IF signal. Moreover