Titlebook: Advances in Solid State Physics 37; Reinhard Helbig Conference proceedings 1998 Springer-Verlag Berlin Heidelberg 1998 condensed matter.co

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Si,C, and Si,Ge,C, alloy layers on Si substrate, Si.C. layers below 180 K, which is attributed to the splitting of the Δ valleys in the conduction band. In p-type modulation doped 8 nm thick Si.Ge.C. quantum wells we observe an improved hole mobility at room temperature and 77 K compared to corresponding samples without C, which is a consequence

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Nonlinear semiconductor microcavity reflectance and photoluminescence from normal-mode coupling to e layers also shows curious density-dependent behavior. When the cavity mode is tuned energetically above the exciton resonance, the upper-polariton peak is weaker (stronger) than the lower-polariton peak at low (high) carrier densities. This crossover occurs at a carrier density less than a factor

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Hanle-oscillations in the stimulated emission of microcavity laser,s with coupled microcavity lasers show a density dependent switching between two distinct oscillation frequencies. The switching turns out to be an interesting method to characterize the active gain medium in coupled microcavities.

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Fano resonances in the optical absorption of low-dimensional semiconductors,oulomb interaction. We formulate conditions for Fano interference, identify low-dimensional semiconductors in which Fano resonances should be observed, and give an overview of theoretical and experimental results. The general theory is illustrated by calculating optical spectra of quantum-well wires.