Titlebook: Advances in Solid State Physics 48; Rolf Haug Book 2009 Springer-Verlag Berlin Heidelberg 2009 Condensed matter physics.Epitaxy.Ferromagne

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书目名称Advances in Solid State Physics 48影响因子(影响力)




书目名称Advances in Solid State Physics 48影响因子(影响力)学科排名




书目名称Advances in Solid State Physics 48网络公开度




书目名称Advances in Solid State Physics 48网络公开度学科排名




书目名称Advances in Solid State Physics 48被引频次




书目名称Advances in Solid State Physics 48被引频次学科排名




书目名称Advances in Solid State Physics 48年度引用




书目名称Advances in Solid State Physics 48年度引用学科排名




书目名称Advances in Solid State Physics 48读者反馈




书目名称Advances in Solid State Physics 48读者反馈学科排名

成份

Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxyed synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. Finally, the excellent structure and ultra-high purity are presented by Raman and Photoluminescence spectroscopy.

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Simple Ways to Complex Nanowires and Their Applications, simple and rapid ways have to be found for organized nanowire fabrication, because applications often require large area coverage with nanostructures or low production costs for mass fabrication. Furthermore, contact formation to nanowires is often difficult to achieve. One solution is the fabric

Charitable

ZnO Nanostructures: Optical Resonators and Lasingdies on individually in-situ accessible, well-faceted upright pillars grown on a metal interlayer on silicon substrate are presented. We observe in cathodoluminescence directly ultraviolet light standing wave resonator modes, and under pulsed excitation lasing activity based on (e,h) plasma recombin

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Vulnerary

Silicon Nanoparticles: Excitonic Fine Structure and Oscillator Strengthn the photoluminescence for nanoparticles with diameters below $10 nm$. Moreover, the excitonic fine structure splitting caused by the exchange interaction is investigated using time-resolved and magnetic-field-dependent photoluminescence measurements. From these results, it is possible to estimate

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Electrical Spin Injection into Single InGaAs Quantum Dotsuantum dots (QDs) via electrical injection∈dex{spin!injection} from ZnMn(S)Se spin aligners. Single dots can be read out optically through metallic apertures on top of our spin-injection light-emitting diodes (spin-LEDs). A reproducible spin polarization degree close to 100% is observed for a subset

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