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Titlebook: Festkörperprobleme 24; P. Grosse Book 1984 Springer-Verlag Berlin Heidelberg 1984 Elektron.Halbleiter.Phasenübergang.Polymer.Streuung.Wass

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The fractional quantum hall effect,imensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to . . = h/
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Lattice distortion, elastic interaction, and phase transitions of hydrogen in metals, an elastic interaction between hydrogen. This elastic interaction is the relevant long range interaction for the phase transition α−ά of hydrogen in niobium. The α and ά phase show a close analogy to the gas and liquid phase of, a real fluid. There is, however, an important difference which is also
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Transport and recombination in hydrogenated amorphous silicon,its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.
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