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Titlebook: Advances in Optoelectronic Materials; Shadia Jamil Ikhmayies,Hatice Hilal Kurt Book 2021 Springer Nature Switzerland AG 2021 Optoelectroni

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发表于 2025-3-21 19:04:58 | 显示全部楼层 |阅读模式
期刊全称Advances in Optoelectronic Materials
影响因子2023Shadia Jamil Ikhmayies,Hatice Hilal Kurt
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发行地址Presents the state of the art of optoelectronic materials and emerging technologies.Shows emerging directions and perspectives for optoelectronic applications.Reviews the optoelectronic properties of
学科分类Advances in‘Material Research and Technology
图书封面Titlebook: Advances in Optoelectronic Materials;  Shadia Jamil Ikhmayies,Hatice Hilal Kurt Book 2021 Springer Nature Switzerland AG 2021 Optoelectroni
影响因子.This book focuses on the progress in optoelectronic materials research and technologies, presenting reviews and original works on the theory, fabrication, characterization, and applications of optoelectronic materials. The chapters discuss preparation and properties of several optoelectronic materials, such as ZnO, SnO2, Zn1-XSnXO, BaTiO3, GaAs, GaP, ZnSe, and NaAlSi. The structural, optical, vibrational, and magnetic properties are discussed, in addition to transport and phase transformations..
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Introduction to Digital Project Management elastic, lattice dynamic and optical properties of NaAlSi using . density-functional theory (DFT) within the generalized gradient approximation (GGA) for the exchange-correlation potential. The calculated lattice constants were in good agreement with the available data. Our band structure calculati
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Achieving Quality in Digital Projectsctronics. In that manner, the present chapter concerns with the optoelectronic characterization of some infrared-sensitive semiconductors to explore the physical parameters having great importance in the investigated structure. The optoelectronic properties of the III–V (GaAs and GaP)and II–VI (ZnSe
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https://doi.org/10.1007/978-1-4302-0823-5In.S. phase, with no signature of secondary phases. The transmission coefficient is about 65–70% in the visible region and 70–90% in near-infrared region. The optical band gap values of In.S.:Sn for allowing direct transitions were found to be in the range 2.68–2.80 eV. The refractive index of In.S.
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A Structural and Optical Look at Functional Materials,Overview:
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Charge Transport Mechanisms in the Silver-Modified Zeolite Porous Microstructure,Overview:
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Physical Properties and Ethanol Response of Sprayed In2S3:Sn Films,Overview:
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