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Titlebook: Advanced Power MOSFET Concepts; B. Jayant Baliga Book 2010 Springer-Verlag US 2010 U-groove metal-oxide-semiconductor transistor.advanced

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发表于 2025-3-21 18:31:46 | 显示全部楼层 |阅读模式
期刊全称Advanced Power MOSFET Concepts
影响因子2023B. Jayant Baliga
视频videohttp://file.papertrans.cn/147/146114/146114.mp4
发行地址Discusses devices that can have a significant impact on improving the efficiency of the Voltage-Regulator-Modules used to deliver power to Microprocessors and Graphics Chips in Laptops and Servers.Cov
图书封面Titlebook: Advanced Power MOSFET Concepts;  B. Jayant Baliga Book 2010 Springer-Verlag US 2010 U-groove metal-oxide-semiconductor transistor.advanced
影响因子.During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas..."Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation..
Pindex Book 2010
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发表于 2025-3-21 21:32:04 | 显示全部楼层
U-MOSFET Structure,l equations, respectively, with interest rate, appreciation rate and volatility such that they are predictable processes. Also, in the Arrow-Debreu economy, the securities prices which support a Radner dynamic equilibrium are a combination of an Ito process and a random point process, with the all c
发表于 2025-3-22 02:45:08 | 显示全部楼层
SC-MOSFET Structure,rce"‘ by means of the differential equation (*) in T. A typical chaotic source can be represented by an appropri­ ate random field"‘ with independent values, i. e. , generalized random function"‘ = ( cp, ‘TJ), cp E C~(T), with independent random variables ( cp, ‘fJ) for any test functions cp with disjoint sup978-90-481-5009-0978-94-017-2838-6
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SiC Planar MOSFET Structures, not be measured directly. We will describe the state space for the dynamical system. The state space method converts the signal to a Markov process. We will be concerned with estimation and identification of Markov processes and system modeUing. We will touch upon controllabihty, observability, and
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Back Matternalysis. From this point of view outerplanar graphs and series-parallel graphs — these are two subclasses of planar graphs that we will study first — are more tree-like than the class of all planar graphs, since the singularity structure of the corresponding generating functions is of square root ty
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