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Titlebook: Advanced Optical Spectroscopy Techniques for Semiconductors; Raman, Infrared, and Masanobu Yoshikawa Book 2023 The Editor(s) (if applicable

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期刊全称Advanced Optical Spectroscopy Techniques for Semiconductors
期刊简称Raman, Infrared, and
影响因子2023Masanobu Yoshikawa
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发行地址Covers the physical principles and best operating practices of a range of optical spectroscopy techniques.Looks at a broad class of semiconductor materials such as silicon, nano-diamond thin films, an
图书封面Titlebook: Advanced Optical Spectroscopy Techniques for Semiconductors; Raman, Infrared, and Masanobu Yoshikawa Book 2023 The Editor(s) (if applicable
影响因子This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.
Pindex Book 2023
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Topics in Biodiversity and Conservationthe visible region, the energy of which is related to an atomic or a molecular vibration in infrared (IR) region, whereas IR spectroscopy is a technique to detect the atomic or the molecular vibration in IR region excited by absorbing or by irradiating the IR light directly into specimens. This chap
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Serra J. Hoagland,Steven K. Albertential forboost performance in future generations of complementary metal oxide semiconductor (CMOS) Si transistors. Raman and CL spectroscopy are especially useful to study strain (or stress) and various defects of thin strained Si layers on a SiGe substrate. The quality of the gate oxide films dete
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Giovanni Savarese,Marco Falconi 1 nm, emitted from an electron gun. As a result, STEM-CL spectroscopy is the most important analytical method to study crystalline quality, strain, and electronic states, and defects of cutting-edge semiconductors at the nanometre level. This chapter firstly explains the STEM-CL spectroscopic syste
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https://doi.org/10.1007/978-3-319-72581-9in these regions. NIR-Raman spectroscopy is also applied for fluorescent materials. Furthermore, Raman and IR spectroscopy have overcome the diffraction limit of light, by combing atomic force microscope (AFM). Terahertz time-domain spectroscopy (THz-TDS), secondary ion mass spectroscopy (SIMS)-opti
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