Titlebook: Advanced Functional Materials and Devices; Select Proceedings o Saluru Baba Krupanidhi,Vinay Gupta,Anjani Kumar Si Conference proceedings 2

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https://doi.org/10.1007/978-3-8349-8941-3compounds XH (X=K, Rb, Cs) and investigated that there is occurrence of phase transition from B1 to B2. And with the help of the Birch–Murnaghan formula, the investigation of the important parameter of structural property that is the bulk modulus has been calculated

Paraplegia

,Streben nach Sicherheit im Kreditgeschäft, study the surface morphology of the foils. Herein, details on the fabrication techniques along with the thickness measurements and characterization results are reported. These investigations formed a crucial part of a study wherein the effect of target thickness on heavy-ion-induced X-ray production cross sections was explored.

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https://doi.org/10.1007/978-3-663-13769-6ique. The electrical properties and electrochemical performance of as-prepared biopolymer films were investigated by electrochemical impedance technique. The maximum ionic conductivity of biopolymer electrolytes films approximately of order 10. S/cm at 30 °C. The voltage stability limit of biopolyme

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https://doi.org/10.1007/978-3-663-13769-6ium metasilicate (SrSiO.) and also explored the conduction mechanism that is responsible for high ionic conductivity in this system. The phase evolution also explains the conduction behavior. The coexistence of crystalline along with few amount amorphous phases was also found to be responsible for h

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https://doi.org/10.1007/978-3-663-13770-2, dielectric, and ferroelectric study of size-controlled cobalt ferrite has been reported. The nanoparticles of cobalt ferrite (CFNP) were prepared via sol–gel method and subsequent heat treatments. With the altering of reaction reactants and temperature, the size has been varied from 10 to 80 nm. T

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https://doi.org/10.1007/978-3-663-13770-2 information storage applications have found PCMs as the emerging successors which are presently employed in rewritable data storage devices due to their fast crystallization speed (Meijer in Science 319:1625, 2007 [.]; Kolobov et al. in Nat Mater 3:703, 2004 [.]; Caravati et al., Appl Phys Lett 91: