Titlebook: 3D TCAD Simulation for CMOS Nanoeletronic Devices; Yung-Chun Wu,Yi-Ruei Jhan Textbook 2018 Springer Nature Singapore Pte Ltd. 2018 Semicon

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秘方药

Perigee

Gerald Goldstein,Ralph E. TarterIn 1965, Gordon Moore proposed the rule that the number of devices on the wafer would be doubled every 18–24 months. This “.” describes the continuous and rapid trend of scaling. Every reduction of feature size will be called a technology generation or technology node. The technology nodes include 0.18, 0.13, 90, 65, and 45 μm.

原谅

残酷的地方

J. Takala,J. Klossner,J. Irjala,S. HannulaAccording to MOSFET scaling rule, the depletion layer formed in the channel of traditional 2D MOSFET near source and drain, the short-channel effect (SCE) has become inevitable along with the scaling of .. dimension.

高贵领导

J. Takala,J. Klossner,J. Irjala,S. HannulaThere will be junctions in the channels of source and drain of traditional inversion-mode (IM) MOSFET or FinFET, such as the nFET with doping style of N.PN..

压倒性胜利

开始从未

H. R. Freund,Z. Gimmon,J. E. FischerHuge efforts are put into CMOS scaling to push the limits of Moore’s law. Semiconductor ICs manufacturing companies are currently ramping up 16-nm/14-nm FinFET processes, with 7 and 5 nm just around the corner.

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