找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno

[复制链接]
查看: 25698|回复: 50
发表于 2025-3-21 19:37:01 | 显示全部楼层 |阅读模式
期刊全称3D Flash Memories
影响因子2023Rino Micheloni
视频video
发行地址The first book to focus on 3D flash memories.Provides details of flash 3D architectures which have never been published before, including a number of 3D cross sections.Offers unique coverage of flash
图书封面Titlebook: 3D Flash Memories;  Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno
影响因子.This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon.  It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology..After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cros
Pindex Book 2016
The information of publication is updating

书目名称3D Flash Memories影响因子(影响力)




书目名称3D Flash Memories影响因子(影响力)学科排名




书目名称3D Flash Memories网络公开度




书目名称3D Flash Memories网络公开度学科排名




书目名称3D Flash Memories被引频次




书目名称3D Flash Memories被引频次学科排名




书目名称3D Flash Memories年度引用




书目名称3D Flash Memories年度引用学科排名




书目名称3D Flash Memories读者反馈




书目名称3D Flash Memories读者反馈学科排名




单选投票, 共有 1 人参与投票
 

0票 0.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

1票 100.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-21 22:27:10 | 显示全部楼层
发表于 2025-3-22 02:51:01 | 显示全部楼层
https://doi.org/10.1007/978-3-319-03677-9undamental technology used to create the NAND memory cell, and (3) changes in usages in different segments which have made SSDs the critical growth segment in NAND. Let us examine all these changes in a little more detail.
发表于 2025-3-22 04:37:24 | 显示全部楼层
https://doi.org/10.1007/978-3-642-95617-1ackaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stacking and 3D monolithic technologies. This chapter covers the former, while the latter is the main subject of this book.
发表于 2025-3-22 12:34:51 | 显示全部楼层
Three-Dimensional Imaging: Technical Aspectse world. This is especially true when looking at planar (2D) ultra-scaled (e.g. 15nm) NAND. Generally speaking, LDPC offers higher correction capabilities, but BCH remains a good solution when bandwidth requirements are very stringent. This chapter provides an overview of both BCH and LDPC state-of-the-art solutions.
发表于 2025-3-22 13:29:00 | 显示全部楼层
https://doi.org/10.1007/978-3-319-03677-9roblems experimentally observed in different 3D CT cell concepts is reported. Finally, 3D FG memory concept is briefly introduced in order to understand the related reliability implications, and a comparison between 3D CT and 3D FG arrays is provided in terms of reliability and expected performances.
发表于 2025-3-22 19:23:56 | 显示全部楼层
发表于 2025-3-22 22:05:08 | 显示全部楼层
Three-Dimensional Imaging: Technical Aspectsl 3D-NAND flash SSD due to SCM’s fast speed. In addition, the performance of the SSD is workload dependent. Thus, it is meaningful to obtain the design guidelines of 3D NAND flash for both all 3D-NAND flash SSD and hybrid SCM/3D-NAND flash SSD with representative real-world workloads.
发表于 2025-3-23 02:36:03 | 显示全部楼层
The Business of NAND,aus ist dort wesentlich nach Th. H. . Karte der Landwirtschaftsgebiete (.) angegeben. Sie verläuft von Hamilton Inlet an der Nordostküste Labradors unter 53° westwärts nach der Jamesbucht der Hudsonbai, von da nordwestwärts zum Grossen Sklavensee, erreicht den Mackenzie unter 63°, biegt zurück auf 6
发表于 2025-3-23 08:32:46 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-5-3 11:39
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表