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书目名称Semiconductor Interfaces at the Sub-Nanometer Scale影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0864848<br><br> <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0864848<br><br> <br><br>Anemia 发表于 2025-3-21 20:56:24
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Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also describedCOWER 发表于 2025-3-22 10:58:31
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Semiconductor Interfaces at the Sub-Nanometer Scale978-94-011-2034-0Series ISSN 0168-132X哀求 发表于 2025-3-22 17:47:07
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemiccerning the preferred growth directions as a function of growth conditions. Finally I will discuss the question of selected area growth.In making the above comparisons I hope to highlight the key factors needed to assess the relative quality of the interfaces prepared by each techniquealtruism 发表于 2025-3-22 21:37:16
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