gloomy 发表于 2025-3-21 19:10:28

书目名称Semiconductor Interfaces at the Sub-Nanometer Scale影响因子(影响力)<br>        http://figure.impactfactor.cn/if/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale影响因子(影响力)学科排名<br>        http://figure.impactfactor.cn/ifr/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale网络公开度<br>        http://figure.impactfactor.cn/at/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale网络公开度学科排名<br>        http://figure.impactfactor.cn/atr/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale被引频次<br>        http://figure.impactfactor.cn/tc/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale被引频次学科排名<br>        http://figure.impactfactor.cn/tcr/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale年度引用<br>        http://figure.impactfactor.cn/ii/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale年度引用学科排名<br>        http://figure.impactfactor.cn/iir/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale读者反馈<br>        http://figure.impactfactor.cn/5y/?ISSN=BK0864848<br><br>        <br><br>书目名称Semiconductor Interfaces at the Sub-Nanometer Scale读者反馈学科排名<br>        http://figure.impactfactor.cn/5yr/?ISSN=BK0864848<br><br>        <br><br>

Anemia 发表于 2025-3-21 20:56:24

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exercise 发表于 2025-3-22 01:55:09

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Encephalitis 发表于 2025-3-22 07:03:57

Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described

COWER 发表于 2025-3-22 10:58:31

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Leisureliness 发表于 2025-3-22 13:00:01

Semiconductor Interfaces at the Sub-Nanometer Scale978-94-011-2034-0Series ISSN 0168-132X

哀求 发表于 2025-3-22 17:47:07

A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemiccerning the preferred growth directions as a function of growth conditions. Finally I will discuss the question of selected area growth.In making the above comparisons I hope to highlight the key factors needed to assess the relative quality of the interfaces prepared by each technique

altruism 发表于 2025-3-22 21:37:16

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Microgram 发表于 2025-3-23 03:09:40

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独裁政府 发表于 2025-3-23 07:14:10

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查看完整版本: Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom