征税
发表于 2025-3-25 05:20:01
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细胞
发表于 2025-3-25 09:06:03
Theory of Atomic-Scale Processes during Epitaxial Growth: Current Statusations are described, along with representative results that have been obtained with these methods. The techniques covered include molecular dynamics and Monte Carlo simulations, and analytic and numerical studies of continuum equations of motion
得罪人
发表于 2025-3-25 13:56:11
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曲解
发表于 2025-3-25 17:22:38
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充足
发表于 2025-3-25 20:16:23
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticed by nearest neighbor and next nearest neighbor two body interactions, with a possible axial anisotropy in the direction of one of the bond directions. The absence of interactions between an odd number of atoms limits the model to the study of systems with a 50% concentration of each type of constit
统治人类
发表于 2025-3-26 03:24:22
Resonant Tunnelling via the Bound States of Shallow Donors comparing the I(V) of such devices with control samples we are able to identify a peak at low voltage which is due to resonant tunnelling through the localised bound states of the Si donors. To eliminate this peak from the control samples the MBE wafers must be grown at lower temperature (550°C) an
notification
发表于 2025-3-26 05:34:00
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CUR
发表于 2025-3-26 10:46:46
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Altitude
发表于 2025-3-26 15:54:29
Dipole Layers at GaAs Heterojunctions and their Investigationinterface. We describe the control of the band discontinuities at InAs-GaAs junctions by δ-d oping in the GaAs, close to the interface, and by submonolayer quantities of Be grown right at the interface. The investigation of the barriers by ballistic electron emission microscopy is also described
歌唱队
发表于 2025-3-26 18:12:35
Clustering and Correlations on GaAs — Metal Interfacegements of the adsorbate atoms were calculated. The results show that most likely the formation of the low-density (ordered or disordered) structures should occur. We show that alkali adatoms mainly act as donors giving their electrons to Ga-derived surface states. These states consist of well local