legitimate
发表于 2025-3-23 13:03:52
Surface Chemistry in the Si/Ge GSMBE system studied using RHEEDlations in both the and azimuths. In this paper I will outline how the RHEED intensity oscillation technique can be used to provide important kinetic data to help in the evaluation of reaction pathways, growth anisotropy and surface segregation effects
corn732
发表于 2025-3-23 17:22:50
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticelysis with diffusion dynamics is also performed on the same model, simulating the growth of a superlattice. Various rates of deposition at the surface is considered. The structure of the interface corresponding to this growth model is then analyzed
吸引人的花招
发表于 2025-3-23 20:53:17
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Truculent
发表于 2025-3-24 00:35:31
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anthesis
发表于 2025-3-24 04:49:49
0168-132X 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the
Duodenitis
发表于 2025-3-24 08:20:14
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arboretum
发表于 2025-3-24 14:25:48
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MULTI
发表于 2025-3-24 15:49:43
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Myofibrils
发表于 2025-3-24 21:25:59
Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductorsn on (001)GaAs as an illustrative example. The proposed mechanism relies on: (1) a particular reconstruction (‘step-terrace reconstruction (STR)’ model) on vicinal (001) surface with a misorientation towards B direction, (2) a large contraction of P-P distances of P-P dimers, (3) both bond-leng
kyphoplasty
发表于 2025-3-25 01:58:52
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