上坡
发表于 2025-3-26 22:23:43
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfrison is made between results obtained on flat, unpinned surfaces and those from rough, pinned surfaces. In both cases, spectroscopic measurements are used to determine the position of the surface Fermi-level relative to the band edges. Band bending in the GaAs induced by the electric-field from the
Hangar
发表于 2025-3-27 01:32:19
http://reply.papertrans.cn/87/8649/864848/864848_32.png
持续
发表于 2025-3-27 09:14:00
http://reply.papertrans.cn/87/8649/864848/864848_33.png
蚀刻
发表于 2025-3-27 10:19:34
http://reply.papertrans.cn/87/8649/864848/864848_34.png
雪崩
发表于 2025-3-27 17:33:54
http://reply.papertrans.cn/87/8649/864848/864848_35.png
服从
发表于 2025-3-27 20:13:23
Smear-out of the Ge/Si Interface in Gas Source MBE Monitored by Rheedm epitaxy (GSMBE) using disilane and germane, respectively. Reflection high energy electron diffraction (RHEED) intensity oscillation traces recorded during the growth of silicon on these layers showed a strong increase in growth rate for the first monolayers and a subsequent return to the value for
Incorporate
发表于 2025-3-28 01:05:54
Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterosattice-matched heterostructures is presented. A strong asymmetry is observed and discussed in parallel with the chemical asymmetry, also related to In segregation, and with a recent tight-binding calculation of the VBO in this system, which shows a clear dependence on the interface chemistry
Compatriot
发表于 2025-3-28 04:14:04
http://reply.papertrans.cn/87/8649/864848/864848_38.png
Costume
发表于 2025-3-28 07:15:59
http://reply.papertrans.cn/87/8649/864848/864848_39.png
COMA
发表于 2025-3-28 12:23:01
http://reply.papertrans.cn/87/8649/864848/864848_40.png