赎罪
发表于 2025-3-21 19:11:02
书目名称Radiation Effects in Advanced Semiconductor Materials and Devices影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0820429<br><br> <br><br>书目名称Radiation Effects in Advanced Semiconductor Materials and Devices读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0820429<br><br> <br><br>
BRAWL
发表于 2025-3-22 00:12:58
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GUEER
发表于 2025-3-22 01:06:05
Displacement Damage in Group IV Semiconductor Materials,x the percentage fraction). As shown in Chap. 2, a high energetic particle or ion may loose part of its energy by interaction with the nuclei of the target material. This initially results in the creation of vacancy-interstitial pairs, of which only a small fraction escapes direct recombination. The
得罪人
发表于 2025-3-22 07:12:52
Radiation Damage in GaAs, In addition, the high electron mobility in GaAs (order 7000 cm./Vs ) makes the material perfectly suitable for the development of high-speed microwave circuits. How-ever, there is more and more competition of SiGe-based and scaled deep submicron Si microelectronics, which dominate the low-power
Enteropathic
发表于 2025-3-22 09:18:07
Space Radiation Aspects of Silicon Bipolar Technologies,or) circuits because of their current-drive capability, linearity, low noise and excellent matching characteristics. Furthermore, their microwave performance compares favorably with respect to CMOS, explaining the use in GHz telecommunications applications and low-cost system-on-chip (SOC) solutions
乐章
发表于 2025-3-22 15:37:06
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follicular-unit
发表于 2025-3-22 20:30:54
GaAs Based Field Effect Transistors for Radiation-Hard Applications,ave applications. The superior operation frequency combined with low high-frequency noise and power dissipation has been exploited for the development of satellite and other telecommunications systems. In this respect, the extreme radiation hardness quoted for these materials is an invaluable plus p
pacific
发表于 2025-3-22 23:42:18
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cleaver
发表于 2025-3-23 01:26:38
,Advanced Semiconductor Materials and Devices—Outlook,s. However, the radiation community also watches the trend in the microelectronics world very carefully. Therefore, new materials and device structures are already in an early phase also studied from a viewpoint of their performance in a radiation envi ronment. This chapter aims at briefly addressin
天空
发表于 2025-3-23 09:12:06
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