找回密码
 To register

QQ登录

只需一步,快速开始

扫一扫,访问微社区

Titlebook: Radiation Effects in Advanced Semiconductor Materials and Devices; Cor Claeys,Eddy Simoen Book 2002 Springer-Verlag Berlin Heidelberg 2002

[复制链接]
查看: 21701|回复: 45
发表于 2025-3-21 19:11:02 | 显示全部楼层 |阅读模式
书目名称Radiation Effects in Advanced Semiconductor Materials and Devices
编辑Cor Claeys,Eddy Simoen
视频video
概述This book summarizes the current knowledge of radiation defects in semiconductors.It will be a useful reference work for scientists involved in semiconductor processing.- This book is important for sp
丛书名称Springer Series in Materials Science
图书封面Titlebook: Radiation Effects in Advanced Semiconductor Materials and Devices;  Cor Claeys,Eddy Simoen Book 2002 Springer-Verlag Berlin Heidelberg 2002
描述In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today‘s device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
出版日期Book 2002
关键词Microelectronics; Radiation damage; Semiconductor; Semiconductor devices and circuits; Space and nuclear
版次1
doihttps://doi.org/10.1007/978-3-662-04974-7
isbn_softcover978-3-642-07778-4
isbn_ebook978-3-662-04974-7Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2002
The information of publication is updating

书目名称Radiation Effects in Advanced Semiconductor Materials and Devices影响因子(影响力)




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices影响因子(影响力)学科排名




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices网络公开度




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices网络公开度学科排名




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices被引频次




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices被引频次学科排名




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices年度引用




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices年度引用学科排名




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices读者反馈




书目名称Radiation Effects in Advanced Semiconductor Materials and Devices读者反馈学科排名




单选投票, 共有 1 人参与投票
 

1票 100.00%

Perfect with Aesthetics

 

0票 0.00%

Better Implies Difficulty

 

0票 0.00%

Good and Satisfactory

 

0票 0.00%

Adverse Performance

 

0票 0.00%

Disdainful Garbage

您所在的用户组没有投票权限
发表于 2025-3-22 00:12:58 | 显示全部楼层
发表于 2025-3-22 01:06:05 | 显示全部楼层
Displacement Damage in Group IV Semiconductor Materials,x the percentage fraction). As shown in Chap. 2, a high energetic particle or ion may loose part of its energy by interaction with the nuclei of the target material. This initially results in the creation of vacancy-interstitial pairs, of which only a small fraction escapes direct recombination. The
发表于 2025-3-22 07:12:52 | 显示全部楼层
Radiation Damage in GaAs, In addition, the high electron mobility in GaAs (order 7000 cm./Vs [1]) makes the material perfectly suitable for the development of high-speed microwave circuits. How-ever, there is more and more competition of SiGe-based and scaled deep submicron Si microelectronics, which dominate the low-power
发表于 2025-3-22 09:18:07 | 显示全部楼层
Space Radiation Aspects of Silicon Bipolar Technologies,or) circuits because of their current-drive capability, linearity, low noise and excellent matching characteristics. Furthermore, their microwave performance compares favorably with respect to CMOS, explaining the use in GHz telecommunications applications and low-cost system-on-chip (SOC) solutions
发表于 2025-3-22 15:37:06 | 显示全部楼层
发表于 2025-3-22 20:30:54 | 显示全部楼层
GaAs Based Field Effect Transistors for Radiation-Hard Applications,ave applications. The superior operation frequency combined with low high-frequency noise and power dissipation has been exploited for the development of satellite and other telecommunications systems. In this respect, the extreme radiation hardness quoted for these materials is an invaluable plus p
发表于 2025-3-22 23:42:18 | 显示全部楼层
发表于 2025-3-23 01:26:38 | 显示全部楼层
,Advanced Semiconductor Materials and Devices—Outlook,s. However, the radiation community also watches the trend in the microelectronics world very carefully. Therefore, new materials and device structures are already in an early phase also studied from a viewpoint of their performance in a radiation envi ronment. This chapter aims at briefly addressin
发表于 2025-3-23 09:12:06 | 显示全部楼层
 关于派博传思  派博传思旗下网站  友情链接
派博传思介绍 公司地理位置 论文服务流程 影响因子官网 SITEMAP 大讲堂 北京大学 Oxford Uni. Harvard Uni.
发展历史沿革 期刊点评 投稿经验总结 SCIENCEGARD IMPACTFACTOR 派博系数 清华大学 Yale Uni. Stanford Uni.
|Archiver|手机版|小黑屋| 派博传思国际 ( 京公网安备110108008328) GMT+8, 2025-6-16 02:48
Copyright © 2001-2015 派博传思   京公网安备110108008328 版权所有 All rights reserved
快速回复 返回顶部 返回列表