obligation
发表于 2025-3-23 13:27:18
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PALMY
发表于 2025-3-23 17:48:08
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Visual-Acuity
发表于 2025-3-23 21:15:57
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优雅
发表于 2025-3-23 23:10:32
Book 2002lso be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
decipher
发表于 2025-3-24 02:25:24
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Esophagitis
发表于 2025-3-24 09:14:34
Displacement Damage in Group IV Semiconductor Materials,ntified. Usually, increasing the annealing temperature leads to a further clustering or aggregation of the point defects into larger, more stable defects. Small clusters may, however, also directly form in the ‘cluster damage’ region induced by high energy neutrons or ions, where a high density of primary V-I pairs is created.
壕沟
发表于 2025-3-24 12:16:03
Radiation Damage in GaAs,y through the use of band gap engineering by modifying the III-V alloy or its composition. In this way, the complete range from the near infrared (InGaP) to the blue wavelength range (GaN) can be covered.
不能仁慈
发表于 2025-3-24 16:03:32
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主动脉
发表于 2025-3-24 21:04:18
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者变
发表于 2025-3-24 23:29:04
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