mature
发表于 2025-3-21 17:43:59
书目名称Neutron Transmutation Doping in Semiconductors影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0664688<br><br> <br><br>书目名称Neutron Transmutation Doping in Semiconductors读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0664688<br><br> <br><br>
音乐等
发表于 2025-3-21 22:08:25
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BROW
发表于 2025-3-22 01:19:11
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摆动
发表于 2025-3-22 05:28:51
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慢慢啃
发表于 2025-3-22 10:50:50
J. E. Morrissey,T. Tillinghast,A. P. Ferro,B. J. Baligaen kann — ein Simultanmodell, welches die Standort-und Tourenplanung „gleichberechtigt” miteinander verknüpft, zu erzwingen. Ein solches Simultanmodell ist allerdings i. d. R. derartig komplex, daß zur Ermittlung guter zulässiger Lösungen nur noch der Rückgriff auf (primale) Heuristiken verbleibt. B
insurgent
发表于 2025-3-22 14:56:38
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侵蚀
发表于 2025-3-22 17:24:38
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Phenothiazines
发表于 2025-3-22 22:46:37
H. M. Hobgood,T. T. Braggins,J. C. Swartz,R. N. Thomas
新奇
发表于 2025-3-23 02:45:35
Nuclear Transmutation Doping from the Viewpoint of Radioactivity Formationation for doping other semiconductor material as well, such as germanium, arsenic or III-V compounds, this application appears to founder on the considerably greater radiation protection problems involved.
绿州
发表于 2025-3-23 06:42:03
Study of the Spatial Characteristics of the Breakdown Process in Silicon PN-Junctionsdegree of dopant uniformity through NTD. Then, using the tool of a scanned, finely focused, optical beam, we indicate how the spatial area and general characteristics of breakdown can be visualized in silicon PN-junctions fabricated from NTD and other types of silicon. We will present scans of the p