endarterectomy 发表于 2025-3-27 01:01:49

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BOOR 发表于 2025-3-27 04:37:56

Resistivity Fluctuations in Highly Compensated NTD SiliconThese calculations are compared with experimental data taken on silicon which has been compensated by the NTD process to resistivities as high as 100,000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a f

偏狂症 发表于 2025-3-27 05:40:49

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鲁莽 发表于 2025-3-27 11:42:12

Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-Emeans of a 20-foil activation technique. This technique employs the most recent version of the SAND-II computer code, which iteratively unfolds the neutron spectrum by fitting the foil activities. A Monte Carlo routine was also employed to calculate standard-deviation errors in each neutron-energy g

发表于 2025-3-27 14:05:01

Neutron Doping of Silicon in the Harwell Research Reactorsce 1975. Ton quantities of material have been irradiated for various customers and the high utilization of the two reactors, with their offset operating cycles, guarantees production throughout the entire year..The present facilities offer a capacity of some 15 tons of medium resistivity material pe

AGOG 发表于 2025-3-27 17:53:58

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languor 发表于 2025-3-28 01:27:23

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audiologist 发表于 2025-3-28 03:18:54

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荣幸 发表于 2025-3-28 10:19:04

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VOC 发表于 2025-3-28 11:45:05

Atomic Displacement Effects in Neutron Transmutation Dopingransmutation doping. Recoiling atoms from fast neutron interactions are the dominant contribution to the energy available for producing atomic displacements. Energy deposition considerations indicate that defect clusters are created but amorphous zone formation is highly unlikely. Extensive defect r
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查看完整版本: Titlebook: Neutron Transmutation Doping in Semiconductors; Jon M. Meese Book 1979 Plenum Press, New York 1979 Potential.circuit.computer.energy.indus