FOLLY
发表于 2025-3-28 15:30:18
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用树皮
发表于 2025-3-28 19:32:48
Resistivity Fluctuations in Highly Compensated NTD Silicon000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a function of the initial starting material resistivity fluctuation.
Meager
发表于 2025-3-29 00:56:18
Transistor Gain Trimming in I2L Integrated Circuits Using the NTD Processhow that a tenfold increase in substrate concentration increased inverse beta by a factor of approximately ten. Minority carrier diffusion length in the substrate was reduced from approximately 9 to 3 microns as a result of the irradiation. Overall results will be compared with I.L made on epitaxial substrates with comparable doping.
障碍物
发表于 2025-3-29 04:16:47
Determination of the Neutron Flux and Energy Spectrum and Calculation of Primary Recoil and Damage-E. The significance of this information with respect to the interpretations of various neutron radiation damage experiments is discussed. A general observation about neutron radiation damage in silicon is also suggested.
GROSS
发表于 2025-3-29 08:37:21
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esoteric
发表于 2025-3-29 13:28:24
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间谍活动
发表于 2025-3-29 18:01:32
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指令
发表于 2025-3-29 21:11:08
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Optimum
发表于 2025-3-30 00:14:04
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行为
发表于 2025-3-30 07:41:48
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