Guffaw
发表于 2025-3-21 16:41:35
书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0660962<br><br> <br><br>书目名称Nanoscaled Semiconductor-on-Insulator Structures and Devices读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0660962<br><br> <br><br>
Ligneous
发表于 2025-3-21 22:03:21
Status and trends in SOI nanodevicesulti-gate Si, SiGe, Ge and GaAs MOSFETs and Nanowires realized with various channel orientations are also addressed. The impact of gate misalignment or underlap, as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined.
使迷醉
发表于 2025-3-22 03:49:27
High-κ Dielectric Stacks for Nanoscaled SOI Devicess paper sets out the basic issues and physics associated with both hi- κ/metal gate and UTB from a device perspective, and establishes the advantages associated with merging the two approaches. A review of the state-of the art devices is undertaken also which serves to emphasize the great potential and progress of this technology.
ANTI
发表于 2025-3-22 05:23:37
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maintenance
发表于 2025-3-22 10:53:20
SiGeC HBTs: impact of C on Device Performance?) on device performance. The devices with low C content (0.45?) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1?.
Retrieval
发表于 2025-3-22 14:20:35
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Popcorn
发表于 2025-3-22 17:48:14
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倾听
发表于 2025-3-22 23:05:19
Nanowire Quantum Effects in Trigate SOI MOSFETsnsconductance when measured as a function of the gate voltage. These oscillations are visible at low temperature (< 30K) in samples with a 45 × 82nm cross section and at room temperature in devices with a 11nm × 48nm cross section.
贪婪性
发表于 2025-3-23 02:18:40
Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETsrt the obtained results. It is demonstrated that the appearance of “substrate-related” transitions, their position and amplitude depend strongly on the substrate doping, space-charge conditions at substrate-BOX interface, temperature and moreover become more pronounced with device downscaling.
灰心丧气
发表于 2025-3-23 07:37:44
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