occult
发表于 2025-3-23 10:12:49
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Thyroxine
发表于 2025-3-23 17:16:37
https://doi.org/10.1007/978-1-4020-6380-0Anode; CMOS; FinFET; IC; MOSFET; Nanotube; Potential; Transistor; electronics; heterojunction bipolar transis
不近人情
发表于 2025-3-23 18:09:17
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Keshan-disease
发表于 2025-3-24 00:32:10
Nanoscaled Semiconductor-on-Insulator Structures and Devices978-1-4020-6380-0Series ISSN 1874-6500 Series E-ISSN 1874-6535
garrulous
发表于 2025-3-24 04:04:14
MuGFET CMOS Process with Midgap Gate MaterialAn increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).
Basal-Ganglia
发表于 2025-3-24 08:20:41
Doping Fluctuation Effects in Multiple-Gate SOI MOSFETsRandom doping fluctuation effects are studied in multiple-gate SOI MOSFETs (MuGFETs) using numerical simulation. The presence of a single doping impurity atom increases threshold voltage. Electrical parameters vary with the physical location of the impurity atom.
intuition
发表于 2025-3-24 12:14:47
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sultry
发表于 2025-3-24 14:57:08
Non-Planar Devices for Nanoscale CMOStion, non-standard fabrication process modules for triplegate nanoscale MOSFETs and sub-10 nm nanowires are presented. Alternatives to costly extreme ultraviolet (EUV) lithography are proposed as well as a self-aligned nickel silicide module to reduce inherent parasitic access resistances.
抱负
发表于 2025-3-24 19:17:37
SiGe Nanodots in Electro-Optical SOI Devicescular-beam growth are the scope of this article. We focus on the fundamental aspects and device applications of the small size dots whose electronic states resemble those of an atom even at room temperature.
NIB
发表于 2025-3-25 00:19:51
Noise Research of Nanoscaled SOI Devicesownscaling as well as the influence of the additional noise sources appearing in the nanoscaled devices on their noise characteristics are explained. It is shown that the drastic changes in the noise performance of the devices can take place as a result of their nanocsaling.