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发表于 2025-3-28 16:05:31
Valeria Kilchytska,David Levacq,Dimitri Lederer,Guillaume Pailloncy,Jean-Pierre Raskin,Denis Flandree insensitive to pain by medication, and hence they may be exposed to hazards without their awareness and protection by their own reaction. Therefore, medical devices must meet particularly stringent safety req978-3-211-99682-9978-3-211-99683-6
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发表于 2025-3-28 19:41:59
1874-6500 nductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and idea978-1-4020-6379-4978-1-4020-6380-0Series ISSN 1874-6500 Series E-ISSN 1874-6535
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发表于 2025-3-29 00:41:31
Steve Hall,O. Buiu,I. Z. Mitrovic,Y. Lu,W. M. Davey
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发表于 2025-3-29 04:25:36
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Metastasis
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Compass
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cardiac-arrest
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策略
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High-κ Dielectric Stacks for Nanoscaled SOI Devices with metal gate to control gate leakage current, can provide a highly scaleable technology to address challenges towards the end of the road map. This paper sets out the basic issues and physics associated with both hi- κ/metal gate and UTB from a device perspective, and establishes the advantages
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发表于 2025-3-30 00:15:48
Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogs of substrate are therefore needed for further scaling in CMOS microelectronics. We consider here semiconductor heterostructure on insulator (HOI) which are compatible with current silicon planar CMOS technology. Specfically, we investigate effects associated with interface mediated endotaxial (IME
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发表于 2025-3-30 07:18:28
Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substratesng fluorine implantation. Vacancy engineering using a silicon implant comprises a high energy silicon implant into an SOI substrate, to separate the excess vacancies in the SOI layer and the excess interstitials below the buried oxide. Results on vacancy-engineering show that a properly optimized hi