fodlder 发表于 2025-3-28 15:46:49

Dielectric Properties of Simple and Complex Oxides from First Principles,ulators. Drawing on previous theoretical work, we discuss the sources and magnitudes of errors in these calculations. For perovskites and related oxide materials, we compare theoretical results with available experimental data on dielectric response and on related properties such as optical absorpti

Fallibility 发表于 2025-3-28 22:08:25

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Free-Radical 发表于 2025-3-28 23:28:22

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ETHER 发表于 2025-3-29 03:46:50

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cancer 发表于 2025-3-29 07:22:27

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连累 发表于 2025-3-29 12:47:55

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坦白 发表于 2025-3-29 17:51:36

Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides,re calculated by various means and compared to their experimental determinations. The bonding at abrupt Si-oxide interfaces are considered in order to obtain an insulating interface. The energy levels of point defects and of interstitial hydrogen are considered as candidates for the substantial fixed charge present in these oxides.

乐意 发表于 2025-3-29 21:32:45

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查看完整版本: Titlebook: Materials Fundamentals of Gate Dielectrics; Alexander A. Demkov,Alexandra Navrotsky Book 2005 Springer Science+Business Media B.V. 2005 Hi