humectant
发表于 2025-3-25 06:02:06
Dielectric Properties of Simple and Complex Oxides from First Principles,cuss methods to model and simulate dielectric response of inhomogeneous materials (e.g. composites). The microscopic analysis is used to develop guidelines in the search for new high-dielectric-constant materials.
amenity
发表于 2025-3-25 10:26:18
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大洪水
发表于 2025-3-25 13:12:05
,Methodology for Development of High-κ Stacked Gate Dielectrics on III–V Semiconductors, application of the proposed methodology has led to high-κ stacked gate oxides on GaAs displaying a broad minimum of interface state density .. ≤ 2 × 10. cm. eV. on n-type GaAs suggesting a U-shaped .. distribution, an oxide relative dielectric constant of 20.8 ± 1, a breakdown field exceeding 4 MV/
雪上轻舟飞过
发表于 2025-3-25 17:29:46
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ligature
发表于 2025-3-26 00:02:35
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Ceramic
发表于 2025-3-26 01:12:20
Ran Liund the insidiously interconnected nature of so-called reforms. Thank you to Keith M. Sturges and colleagues for illuminating exactly this in their important and hard-hitting new book that reveals not merely how neoliberal reforms are designed to reinforce inequity, but also how the contradictions wi
FOR
发表于 2025-3-26 07:31:33
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REIGN
发表于 2025-3-26 11:23:25
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obviate
发表于 2025-3-26 13:19:09
Gerald Lucovskynd the insidiously interconnected nature of so-called reforms. Thank you to Keith M. Sturges and colleagues for illuminating exactly this in their important and hard-hitting new book that reveals not merely how neoliberal reforms are designed to reinforce inequity, but also how the contradictions wi
四海为家的人
发表于 2025-3-26 18:55:43
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