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Mechanistic Studies of Dielectric Growth on Silicon,

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CRATE 发表于 2025-3-24 14:59:11

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on, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scatter978-90-481-6786-9978-1-4020-3078-9
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查看完整版本: Titlebook: Materials Fundamentals of Gate Dielectrics; Alexander A. Demkov,Alexandra Navrotsky Book 2005 Springer Science+Business Media B.V. 2005 Hi