Affordable
发表于 2025-3-21 19:21:25
书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0380405<br><br> <br><br>书目名称Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0380405<br><br> <br><br>
CRP743
发表于 2025-3-21 21:41:18
Vertical GaN Transistors for Power Electronics, technology, detailing out the three-terminal devices developed over the last decade. Power converters rely on solid state devices featuring diodes and transistors as their basic building blocks. GaN technology is an ever-expanding topic for R&D, proving its potential to solve several challenges in
Neonatal
发表于 2025-3-22 02:13:18
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SOB
发表于 2025-3-22 07:21:27
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联想
发表于 2025-3-22 10:21:55
Impact of Parasitics on GaN-Based Power Conversion,cs whenever they were found to be limiting the system operation or performance in some manner. The current approach has always been to mitigate the effects of these unwanted parasitics through design improvements, be it on a device, package, or system level. As these parasitics are, for the most par
synchronous
发表于 2025-3-22 13:13:48
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synchronous
发表于 2025-3-22 18:57:15
GaN in Switched-Mode Power Amplifiers, power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche
unstable-angina
发表于 2025-3-22 23:43:30
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音乐等
发表于 2025-3-23 03:10:00
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics,One of the major factors in determining the quality of GaN technology is the epitaxial step. This chapter reviews two different approaches: the use of bulk GaN substrates and GaN-on-Si epitaxy.
洞穴
发表于 2025-3-23 08:21:38
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