Muffle
发表于 2025-3-23 11:38:22
Considerations on Planning and Architecture,G in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally off operation are presented.
移动
发表于 2025-3-23 14:19:27
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Indict
发表于 2025-3-23 20:42:38
https://doi.org/10.1007/978-3-319-77994-2Gallium Nitride; GaN device physics; GaN for Power Conversion; GaN transistors; GaN Reliability
Cabinet
发表于 2025-3-23 22:42:45
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Collected
发表于 2025-3-24 03:02:13
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Evacuate
发表于 2025-3-24 10:08:19
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煤渣
发表于 2025-3-24 11:40:05
https://doi.org/10.1007/978-3-031-05469-3able to guarantee their reliability. In this chapter, we discuss how to evaluate the robustness of GaN power transistors. In the switching of GaN power transistors, they can be subject to the so-called current collapse that is a specific phenomenon for GaN in which the ON state resistance is increas
起皱纹
发表于 2025-3-24 17:41:08
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施魔法
发表于 2025-3-24 19:30:29
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Critical
发表于 2025-3-25 03:13:48
https://doi.org/10.1007/978-1-4842-2102-0 power converters, and wireless power transfer (WPT) among myriad other applications. Advances in power semiconductor devices, magnetics, and circuit design are opening the door to much more efficient generation and delivery of power at radio frequencies. This chapter presents an overview of switche