landmark
发表于 2025-3-25 04:45:55
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开始从未
发表于 2025-3-25 10:42:38
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion978-3-319-77994-2Series ISSN 1558-9412 Series E-ISSN 1558-9420
malapropism
发表于 2025-3-25 14:50:40
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小步舞
发表于 2025-3-25 16:42:31
Book 2018level, both for power conversions architectures and switched mode power amplifiers;.Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;.Enables design of smaller, cheaper and more efficient power supplies..
手术刀
发表于 2025-3-25 20:34:03
Torgeir Dingsøyr,Tore Dybå,Nils Brede Moegher) from a single chip for a rated voltage (1KV and higher) is a standard requirement. Particularly when the market is favorable toward electrification of cars and other means of transportations, GaN must expand its scope to provide high power solutions with higher power density compared to Si and
Missile
发表于 2025-3-26 01:12:34
https://doi.org/10.1007/978-3-031-05469-3is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca
军械库
发表于 2025-3-26 08:11:58
https://doi.org/10.1007/978-1-4842-2102-0t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency
改良
发表于 2025-3-26 09:16:19
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ethereal
发表于 2025-3-26 14:00:24
Validating GaN Robustness,is crucially dependent on the drain current – voltage locus curve during the switching event, the switching reliability of GaN transistor depends on the switching locus. Accordingly a concept of Switching Safe Operating Area (SSOA) is proposed to define the switching conditions wherein the device ca
新鲜
发表于 2025-3-26 17:57:58
GaN in Switched-Mode Power Amplifiers,t construction, including the design and application of passive components at radio frequencies. Magnetics for power applications at HF and VHF pose a special challenge when compactness and high efficiency are desired. We explore the design of air-core and magnetic-core magnetics for this frequency