CILIA
发表于 2025-3-21 16:10:12
书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0380322<br><br> <br><br>书目名称Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0380322<br><br> <br><br>
murmur
发表于 2025-3-21 23:45:08
Gain-Cell eDRAMs (GC-eDRAMs): Review of Basics and Prior Art, then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process
irritation
发表于 2025-3-22 02:43:42
Retention Time Modeling: The Key to Low-Power GC-eDRAMs,d 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al.,
archaeology
发表于 2025-3-22 05:50:32
Conventional GC-eDRAMs Scaled to Near-Threshold Voltage (NTV),cuits. This chapter argues that embedded memories should follow the trend of voltage scaling to the near-.. domain in order to facilitate SoC integration. In this context, the impact of supply voltage scaling on the retention time of a conventional 2T GC-eDRAM array is analyzed, and it is further sh
万神殿
发表于 2025-3-22 10:40:33
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诱惑
发表于 2025-3-22 13:21:42
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诱惑
发表于 2025-3-22 18:38:04
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案发地点
发表于 2025-3-23 00:24:23
Conclusions,VLSI SoCs. The presented GC-eDRAM circuits were targeted at a broad range of low-power VLSI SoCs, from ultra-low power systems operated at subthreshold (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key
疲惫的老马
发表于 2025-3-23 01:56:21
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撤退
发表于 2025-3-23 08:08:23
Advances in Cardiac Signal Processing then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process