CBC471
发表于 2025-3-23 12:57:09
U. Kühl,M. Pauschinger,H.-P. Schultheissd 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al.,
periodontitis
发表于 2025-3-23 13:57:05
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厌恶
发表于 2025-3-23 21:31:59
Sequential Steps of Emergency Airway Controlnhance the data retention time for operation at near-threshold voltage (NTV). First, a 3-transistor (3T) gain-cell (GC) using a full transmission gate (TG) write port is presented. This full TG 3T GC bitcell allows fast write operations as well as memory operation at a single supply voltage, whereas
能够支付
发表于 2025-3-23 22:56:40
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ADAGE
发表于 2025-3-24 02:31:05
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sigmoid-colon
发表于 2025-3-24 08:42:28
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打折
发表于 2025-3-24 11:38:51
978-3-319-86855-4Springer International Publishing AG 2018
ALIEN
发表于 2025-3-24 16:04:50
https://doi.org/10.1007/978-3-319-60402-2Memory Systems; Memory for VLSI; embedded DRAM memory; embedded memory design; memory optimization; error
maladorit
发表于 2025-3-24 22:46:47
Pascal Meinerzhagen,Adam Teman,Alexander FishProvides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applications;.Models the statistical retention time distribution of GC-eDRAM and validates the model by silicon
stressors
发表于 2025-3-25 01:28:23
Targeted Therapies in Cancer Treatment,tems, are presented next. Finally, a short review of the state-of-the-art embedded memory technologies, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM), is provided, before closing the chapter with a book outline.