有机体
发表于 2025-3-26 23:29:09
Spatial Data Mining and Knowledge Discovery, the weaker data level among “0” and “1” is presented. A simulation based proof of concept is provided for a 65 nm CMOS node. A redundant 4T GC bitcell for soft error tolerance is presented next. This 4T GC offers per-cell redundancy at a small area cost and enables GC-eDRAM array architectures with a parity column for error correction.
背叛者
发表于 2025-3-27 02:18:31
Quality of Life in Celiac Disease,d (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key to achieve energy efficiency in GC-eDRAM is a proper understanding and control of the factors that determine the data retention time and its statistical distribution.
–DOX
发表于 2025-3-27 06:50:07
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Blazon
发表于 2025-3-27 09:52:41
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coddle
发表于 2025-3-27 16:29:44
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ASSAY
发表于 2025-3-27 18:03:59
Sequential Steps of Emergency Airway Controlthe retention time. Finally, as an assist technique to reduce accumulated pessimism from assuming worst-case process, voltage, temperature (PVT) conditions and write disturb activities, a replica technique for optimum refresh timing is presented, and its effectiveness is demonstrated through silicon
绿州
发表于 2025-3-28 01:34:05
Retention Time Modeling: The Key to Low-Power GC-eDRAMs,e nominal value, as well as the statistical distribution of the per-cell retention time of 2-transistor (2T)-bitcell GC-eDRAMs, which is found to follow a log-normal distribution. The accuracy of the proposed retention time model is verified by extensive Monte Carlo (MC) and worst-case distance circ
CHAR
发表于 2025-3-28 03:46:00
Novel Bitcells and Assist Techniques for NTV GC-eDRAMs,the retention time. Finally, as an assist technique to reduce accumulated pessimism from assuming worst-case process, voltage, temperature (PVT) conditions and write disturb activities, a replica technique for optimum refresh timing is presented, and its effectiveness is demonstrated through silicon
财政
发表于 2025-3-28 07:35:55
GC bitcells are evaluated under aggressive technology and voltage scaling (down to the subthreshold domain), before novel bitcells for aggressively scaled CMOS nodes and soft-error tolerance as presented, including a 4-transistor GC with partial internal feedback and a 4-transistor GC with built-in redundancy..978-3-319-86855-4978-3-319-60402-2
漂亮才会豪华
发表于 2025-3-28 14:28:17
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