海市蜃楼
发表于 2025-3-21 17:10:17
书目名称Electronic Structure of Semiconductor Heterojunctions影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0306426<br><br> <br><br>书目名称Electronic Structure of Semiconductor Heterojunctions读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0306426<br><br> <br><br>
凶残
发表于 2025-3-21 21:12:13
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商店街
发表于 2025-3-22 03:51:47
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强壮
发表于 2025-3-22 07:13:25
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桶去微染
发表于 2025-3-22 09:37:24
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团结
发表于 2025-3-22 13:18:01
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团结
发表于 2025-3-22 19:48:39
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entreat
发表于 2025-3-22 22:56:55
Schottky barriers: An effective work function modelgold is found to correlate well with the anion work function, suggesting the interface phases are often anion rich. This correlation holds even for cases in which the “common anion rule” fails, and explains both successes and failures of this earlier model.
debase
发表于 2025-3-23 02:36:24
Parabolic quantum wells with the GaAs-Al,Ga,As system = 0.15Δ.. generally assumed for square wells. Experiment and theory show that parabolic wells can lead to parity-allowed Δ. = 2 (“forbidden”) transitions with strengths greater than Of nearby Δ. = 0(“allowed”) transitions.
travail
发表于 2025-3-23 08:16:48
Growth of Microstructures by Molecular Beam Epitaxyric fields may be applied, new structures with enhanced carrier mobilities, structures for tunneling injection of carriers, and possible structures for achievement of quantum wires and dots. New crystal systems and new growth techniques are extending the range of accessible microstructures.