西瓜
发表于 2025-3-28 16:31:39
Heterojunctions: Definite breakdown of the electron affinity rulel to predict semiconductor-semiconductor band lineups. The results show, beyond any experimental uncertainty, that the rule is incorrect. The elimination of the rule and of all models related to it considerably simplifies the theoretical situation of this fundamental area of solid-state physics.
要求比…更好
发表于 2025-3-28 21:23:14
Parabolic quantum wells with the GaAs-Al,Ga,As systemreflect harmonic oscillator-like electron and hole levels. The many observed heavy-hole transitions can be fitted accurately with a model that divides the energy-gap discontinuity Δ.. equally between the conduction and valence-band wells. This is in marked contrast to the usual Δ.. = 0.85Δ.. and Δ..
讨人喜欢
发表于 2025-3-28 23:53:22
978-90-277-2823-4Editoriale Jaca Book spa, Milano 1988
WAX
发表于 2025-3-29 04:12:14
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平息
发表于 2025-3-29 09:12:45
0923-1749 Overview: 978-90-277-2823-4978-94-009-3073-5Series ISSN 0923-1749
ANA
发表于 2025-3-29 14:56:15
Perspectives in Condensed Matter Physicshttp://image.papertrans.cn/e/image/306426.jpg
essential-fats
发表于 2025-3-29 19:34:30
,Gesundheit und Innovation – Grundlagen,Following the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.
策略
发表于 2025-3-29 20:33:03
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充满人
发表于 2025-3-30 01:39:28
A Bird’s-Eye View on the Evolution of Semiconductor Superlattices and Quantum WellsFollowing the past seventeen-year developmental path in the research of semiconductor superlattices and quantum wells, significant milestones are presented with emphasis on experimental investigations in the device physics of reduced dimensionality performed in cooperation with the materials science of heteroepitaxial growth.
毕业典礼
发表于 2025-3-30 07:54:19
Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionThe conduction- and valence-band discontinuities for the (110) GaAs-Ge heterojunction have been measured as Δ.. = 0.50 eV and Δ.. = 0.25 e. by the angle-resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett ..