OATH
发表于 2025-3-26 23:32:43
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Hormones
发表于 2025-3-27 05:08:41
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蔑视
发表于 2025-3-27 07:43:27
Heterostructure Devices: A Device Physicist Looks at Interfacesto the macroscopic electrostatic forces already present in homostructure devices. Incorporation of hetero-interfaces therefore offers a powerful device design parameter to control the distribution and flow of mobile carriers, greatly improving existing kinds of devices and making new kinds of device
男学院
发表于 2025-3-27 11:41:58
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PON
发表于 2025-3-27 14:30:08
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黑豹
发表于 2025-3-27 17:50:42
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sultry
发表于 2025-3-28 00:00:48
Internal Photoemission in GaAs/(AlxGa1−x)As Heterostructuresphoton energies exceeding the fundamental energy gaps of GaAs and (Al.Ga.)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al.Ga.)As and in the near red region where exci
GRUEL
发表于 2025-3-28 05:31:57
Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructuresunced structure in the GaAs optical absorption spectrum. Up to eight resolved exciton transitions, associated with different bound-electron and bound-hole states, have been observed. The heterostructure behaves as a simple rectangular potential well with a depth of ≈0.88Δ.., for confining electrons
笨重
发表于 2025-3-28 08:15:52
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Invertebrate
发表于 2025-3-28 10:40:40
Defective Heterojunction Modelsd misfit-dislocation pinned heterojunction of GaAs. Theories of such behavior are numerous and disparate. Theories of ideal heterojunction band offsets are less diverse, but have still not converged to a single mechanism. Recent studies of heterojunctions suggest that the conduction-band offsets are