Default
发表于 2025-3-28 15:13:04
Methods of Forming SOI Wafers,he case for silicon on sapphire (SOS) and silicon on zirconia (SOZ). In the second group, a thin insulating layer is used to separate the active semiconductor layer from the semiconductor substrate (i.e., the SIS structure). Methods of forming SIS structures include Separation by IM-plantation of OX
金丝雀
发表于 2025-3-28 21:30:48
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facilitate
发表于 2025-3-28 23:59:36
Wafer-Screening Techniques,d buried oxide, and other electrical and physical properties (carrier lifetime, interface trapping, etc.) of the starting wafers prior to the fabrication of SOI devices and circuits. Fluctuations in quality and uniformity of SOI materials have great impact on the performance, yield, and reliability
MUTE
发表于 2025-3-29 07:08:53
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absolve
发表于 2025-3-29 10:09:10
SIS Capacitor-Based Characterization Techniques,aces and in the buried oxide of the SOI material by using its inherent silicon—insulator—silicon (SIS) capacitor structure. The techniques include small-signal a.c. capacitance and conductance as well as transient capacitance methods.[.,.] The capacitance and conductance methods consist of low-frequ
四目在模仿
发表于 2025-3-29 13:14:38
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