大雨
发表于 2025-3-25 03:24:12
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CLAP
发表于 2025-3-25 07:34:00
The Springer International Series in Engineering and Computer Sciencehttp://image.papertrans.cn/e/image/305702.jpg
坚毅
发表于 2025-3-25 15:12:55
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SEMI
发表于 2025-3-25 19:48:59
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emission
发表于 2025-3-25 23:03:34
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Cabg318
发表于 2025-3-26 03:10:38
Grundlagen der betrieblichen Lohnfindungd buried oxide, and other electrical and physical properties (carrier lifetime, interface trapping, etc.) of the starting wafers prior to the fabrication of SOI devices and circuits. Fluctuations in quality and uniformity of SOI materials have great impact on the performance, yield, and reliability
赏心悦目
发表于 2025-3-26 05:05:00
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overture
发表于 2025-3-26 08:48:50
https://doi.org/10.1007/978-3-8348-9927-9aces and in the buried oxide of the SOI material by using its inherent silicon—insulator—silicon (SIS) capacitor structure. The techniques include small-signal a.c. capacitance and conductance as well as transient capacitance methods.[.,.] The capacitance and conductance methods consist of low-frequ
Factorable
发表于 2025-3-26 12:56:28
Verkettete Codes und iterative Decodierung a SOI substrate. SOI diodes have either vertical or lateral configuration (Fig. 7.1). Vertical diodes are fabricated on thick epitaxial films and behave like bulk-silicon diodes except that the material properties may be quite different. Thin lateral diodes are more typical SOI devices. The forward
大喘气
发表于 2025-3-26 17:26:16
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