珍爱
发表于 2025-3-21 19:24:00
书目名称Dilute III-V Nitride Semiconductors and Material Systems影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0280453<br><br> <br><br>书目名称Dilute III-V Nitride Semiconductors and Material Systems读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0280453<br><br> <br><br>
plasma
发表于 2025-3-21 23:53:22
Springer Series in Materials Sciencehttp://image.papertrans.cn/e/image/280453.jpg
frivolous
发表于 2025-3-22 02:43:45
https://doi.org/10.1007/978-3-540-74529-7Modulator; development; dynamics; electronic properties; electronic structure; electronics; laser; nanostru
dominant
发表于 2025-3-22 04:39:57
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podiatrist
发表于 2025-3-22 11:04:43
Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers,such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.
Sedative
发表于 2025-3-22 13:43:12
Karin Weiss,Katrin Isermann,Janette Brauerre we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III−N.−V. alloys including GaN.As., InN.P.
Sedative
发表于 2025-3-22 17:14:04
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加剧
发表于 2025-3-23 00:07:14
Sozialisation zur Mitbürgerlichkeittronegativity or low ionization energy can be explained by the band anticrossing model. Interaction between the localized levels introduced by a highly electronegative impurity, such as N in GaN.As., and the delocalized states of the host semiconductor causes a restructuring of the conduction band i
不能妥协
发表于 2025-3-23 02:46:20
Wieviel Autonomie besitzen Kinder?ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio
我还要背着他
发表于 2025-3-23 08:42:19
Sozialismus im 20. Jahrhundert,vior of conduction band effective mass as a function of Fermi energy, nitrogen content, and pressure. From analysis of the effective mass for different electron concentrations we have determined the energy dispersion relation for conduction band. We have investigated also optical absorption spectra