藐视 发表于 2025-3-25 04:05:29

https://doi.org/10.1007/978-3-531-92773-2such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.

filicide 发表于 2025-3-25 08:48:52

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Nutrient 发表于 2025-3-25 14:26:36

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山顶可休息 发表于 2025-3-25 18:47:39

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Perineum 发表于 2025-3-25 20:07:24

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Triglyceride 发表于 2025-3-26 02:36:44

Wieviel Autonomie besitzen Kinder?n with the lowest conduction bands induce a pronounced nonparabolicity of this band and affect strongly the value of the effective electron mass and its pressure and composition dependences. The origin of the additional . . optical transition is elucidated.

Adornment 发表于 2025-3-26 07:28:17

Patricia Peill-Schoeller,Pengcheng Lie ladder method was developed to deal realistically with the highly inelastic nature of polar-optical phonon scattering, which limits the high temperature mobility in most III–V semiconductors. Here, we detail this extension and discuss the theoretical models of electron scattering from nitrogen centres.

Oration 发表于 2025-3-26 10:37:05

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GORGE 发表于 2025-3-26 16:04:10

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过多 发表于 2025-3-26 19:54:14

Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the eering since the bandgap discontinuity, strains, and the bandgap energy in this system can be controlled more independently than in ternary or quaternary quantum wells. Moreover, N-related increase in the electron effective mass is discussed in this work.
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查看完整版本: Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ayşe Erol (Faculty of Science) Book 2008 Springer-Verlag Ber