杀子女者 发表于 2025-3-30 12:00:45

The Hall Mobility in Dilute Nitrides, scattering from nitrogen sites and clusters, the conduction band becomes highly non-parabolic, which further affects the transport properties. The effect of this non-parabolicity on the mobility can be dealt with using an extension to the ladder method for solving Boltzmann‘s transport equation. Th

凝结剂 发表于 2025-3-30 12:54:34

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两种语言 发表于 2025-3-30 20:00:32

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我悲伤 发表于 2025-3-31 00:42:32

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Promotion 发表于 2025-3-31 03:45:56

Doping, Electrical Properties and Solar Cell Application of GaInNAs,n multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-relate

CROW 发表于 2025-3-31 05:23:31

Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Disloemiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by d

GRACE 发表于 2025-3-31 11:53:29

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OVERT 发表于 2025-3-31 14:54:21

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完成 发表于 2025-3-31 20:54:42

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arousal 发表于 2025-4-1 01:43:32

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查看完整版本: Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ayşe Erol (Faculty of Science) Book 2008 Springer-Verlag Ber