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Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ayşe Erol (Faculty of Science) Book 2008 Springer-Verlag Ber

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书目名称Dilute III-V Nitride Semiconductors and Material Systems
副标题Physics and Technolo
编辑Ayşe Erol (Faculty of Science)
视频video
概述Covers major developments in this new class of materials.Integrates materials science and applications in optics and electronics in a unique way.Both a reference work for researchers and a study text
丛书名称Springer Series in Materials Science
图书封面Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ayşe Erol (Faculty of Science) Book 2008 Springer-Verlag Ber
描述.A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. "Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems" reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials. .
出版日期Book 2008
关键词Modulator; development; dynamics; electronic properties; electronic structure; electronics; laser; nanostru
版次1
doihttps://doi.org/10.1007/978-3-540-74529-7
isbn_softcover978-3-642-09393-7
isbn_ebook978-3-540-74529-7Series ISSN 0933-033X Series E-ISSN 2196-2812
issn_series 0933-033X
copyrightSpringer-Verlag Berlin Heidelberg 2008
The information of publication is updating

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发表于 2025-3-21 23:53:22 | 显示全部楼层
Springer Series in Materials Sciencehttp://image.papertrans.cn/e/image/280453.jpg
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https://doi.org/10.1007/978-3-540-74529-7Modulator; development; dynamics; electronic properties; electronic structure; electronics; laser; nanostru
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Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers,such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.
发表于 2025-3-22 13:43:12 | 显示全部楼层
Karin Weiss,Katrin Isermann,Janette Brauerre we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III−N.−V. alloys including GaN.As., InN.P.
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Sozialisation zur Mitbürgerlichkeittronegativity or low ionization energy can be explained by the band anticrossing model. Interaction between the localized levels introduced by a highly electronegative impurity, such as N in GaN.As., and the delocalized states of the host semiconductor causes a restructuring of the conduction band i
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Wieviel Autonomie besitzen Kinder?ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio
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Sozialismus im 20. Jahrhundert,vior of conduction band effective mass as a function of Fermi energy, nitrogen content, and pressure. From analysis of the effective mass for different electron concentrations we have determined the energy dispersion relation for conduction band. We have investigated also optical absorption spectra
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