奖牌
发表于 2025-3-25 06:09:31
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FORGO
发表于 2025-3-25 07:34:04
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Airtight
发表于 2025-3-25 15:36:28
ntegrity, and thermal analysis for 3D IC designs.Provides fuThis book provides readers with a variety of algorithms and software tools, dedicated to the physical design of through-silicon-via (TSV) based, three-dimensional integrated circuits. It describes numerous “manufacturing-ready” GDSII-level
LITHE
发表于 2025-3-25 17:55:30
Nikolaos L. Ninis,Stavros K. Kourkoulis with the gate count. Two approaches are proposed to alleviate TSV-to-TSV coupling, namely TSV shielding and buffer insertion. Analysis results show that both approaches are effective in reducing the TSV-caused-coupling and improving timing..The materials presented in this chapter are based on [.].
MAL
发表于 2025-3-25 22:33:24
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广口瓶
发表于 2025-3-26 01:49:30
Mechanical Behaviour and Propertiesistribution within a TSV and its power wire connections. Second, we build and validate effective TSV models for current density distributions. Finally, these models are integrated with global power wires for detailed chip-scale power grid analysis..The materials presented in this chapter are based on [.].
Adulate
发表于 2025-3-26 04:57:11
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战役
发表于 2025-3-26 12:00:05
Maria Rosa Valluzzi,Claudio Modena-power cells are vertically overlapping below the TSVs. These methods are employed in a force-directed 3D placement successfully and outperform several state-of-the-art placers published in recent literature..The materials presented in this chapter are based on .
Ptosis
发表于 2025-3-26 15:28:44
Book 2013-dimensional integrated circuits. It describes numerous “manufacturing-ready” GDSII-level layouts of TSV-based 3D ICs developed with the tools covered in the book. This book will also feature sign-off level analysis of timing, power, signal integrity, and thermal analysis for 3D IC designs. Full det
vascular
发表于 2025-3-26 17:38:29
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