离开
发表于 2025-3-26 21:58:43
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缩短
发表于 2025-3-27 02:33:25
978-94-010-5203-0Springer Science+Business Media Dordrecht 1992
珠宝
发表于 2025-3-27 06:01:26
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法官
发表于 2025-3-27 09:55:58
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A保存的
发表于 2025-3-27 17:14:55
nce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.
Chronic
发表于 2025-3-27 20:04:43
The History of Rope Transportation, (DLTS) and current-voltage (IV) measurements. For both undecorated and Fe-decorated stacking faults similar deep level spectra were found with a dominant level at Ev+0.5 eV. For diodes with decorated stacking faults the IV-measurements reveal a drastic enhancement of the reverse current which correlates with the Fe concentration.
FLOAT
发表于 2025-3-28 00:07:38
Scaling for Convective Boundary Layers gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.
GULLY
发表于 2025-3-28 03:19:29
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Antimicrobial
发表于 2025-3-28 07:12:32
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersnce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.
打包
发表于 2025-3-28 11:58:16
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