terazosin 发表于 2025-3-23 12:03:34
https://doi.org/10.1007/978-3-322-88325-4uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s陈腐思想 发表于 2025-3-23 15:11:51
https://doi.org/10.1007/978-3-322-88325-4 to new possibilities for ultrahigh-speed large-scale integration (LSI)—verylarge-scale integration (VLSI) applications,. and high-frequency microwave devices applications. The evolution of high-speed low-power HEMT devices is the result of continuous technological progress utilizing the superior el地牢 发表于 2025-3-23 21:03:30
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Paradigma der Selbstoptimierung,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.顶点 发表于 2025-3-24 04:20:12
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